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Fast Recovery Epitaxial Diode (FRED)
DSEI 60
IFAVM = 52 A VRRM = 1200 V trr = 40 ns
VRSM V 1200
VRRM V 1200
Type
A
C
TO-247 AD
C
DSEI 60-12A
A
C
A = Anode, C = Cathode
Symbol IFRMS IFAVM yyx IFRM IFSM
Test Conditions TVJ = TVJM TC = 60C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM TVJ = 45C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
Maximum Ratings 100 52 800 500 540 450 480 1250 1200 1000 950 -40...+150 150 -40...+150 A A A A A A A A2s A2s A2s A2s C C C W Nm g
Features
q
q q q q
TVJ = 150C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine I2t TVJ = 45C t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
q q
International standard package JEDEC TO-247 AD Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0
TVJ = 150C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ TVJM Tstg Ptot Md Weight TC = 25C Mounting torque
Applications
q
q q q
189 0.8...1.2 6
q
q q
Symbol
Test Conditions
Characteristic Values typ. max. 2.2 0.5 14 2.0 2.55 1.65 8.3 0.66 0.25 35 mA mA mA V V V mW K/W K/W K/W ns A
q
Antiparallel diode for high frequency switching devices Anti saturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating and melting Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders
IR
TVJ = 25C TVJ = 25C TVJ = 125C IF = 60 A;
VR = VRRM VR = 0.8 * VRRM VR = 0.8 * VRRM TVJ = 150C TVJ = 25C
Advantages
q q
VF VT0 rT RthJC RthCK RthJA trr IRM
q q q
For power-loss calculations only TVJ = TVJM
High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Low losses Operating at lower temperature or space saving by reduced cooling
IF = 1 A; -di/dt = 200 A/ms; VR = 30 V; TVJ = 25C VR = 540 V; IF = 60 A; -diF/dt = 480 A/ms L 0.05 mH; TVJ = 100C
40 32
60 36
(c) 2000 IXYS All rights reserved
1-2
036
x IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions
DSEI 60, 1200 V
90 A 80 70 IF 60 50 6 40 30 20 2 10 0 0 1 VF 2 3 V 4 0 10 100 -diF/dt typ. 4 max. TVJ= 25C TVJ=100C TVJ=150C Qr 12 C 10 8 IF=60A IF=120A IF=60A IF=30A
TVJ=100C VR= 540V
80 A 60
IRM
TVJ=100C VR=540V IF=60A IF=120A IF=60A IF=30A
max.
40
typ. 20
0
A/s 1000
0
200
400
-diF/dt
600
800 A/s 1000
Fig. 1 Forward current versus voltage drop.
Fig. 2 Recovery charge versus -diF/dt.
Fig. 3 Peak reverse current versus -diF/dt.
60 1200 ns 1000 VFR 800 tfr 600 400 tfr
1.4 1.2
1.0 s 0.8 max. TVJ=100C VR=540V
V 50 40 VFR 30 20
1.0 Kf
IRM
0.8 0.6
trr
0.6
IF=60A IF=120A IF=60A IF=30A
0.4
QR
0.4 0.2 0.2 0.0 0 40 TJ 80 120 C 160 0.0 0 200 400 600 -diF/dt A/s 800 1000 typ.
10 0 0 200 400 600 diF/dt
TVJ=125C IF=60A
200 0
800 A/s 1000
Fig. 4 Dynamic parameters versus junction temperature.
Fig. 5 Recovery time versus -diF/dt.
Fig. 6 Peak forward voltage versus diF/dt.
Dimensions
Dim. A B C D E F G H J K L M N Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 2.2 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.54 Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102
Fig. 7 Transient thermal impedance junction to case.
(c) 2000 IXYS All rights reserved
2-2

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